BUL49D vs BUL49DFP vs BUL49D(E)

 
PartNumberBUL49DBUL49DFPBUL49D(E)
DescriptionBipolar Transistors - BJT NPN Hi-Volt Fast SwBipolar Transistors - BJT PWR BIP/S.SIGNAL
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220FP-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max450 V450 V-
Collector Base Voltage VCBO850 V--
Emitter Base Voltage VEBO10 V10 V-
Collector Emitter Saturation Voltage1.2 V--
Maximum DC Collector Current5 A5 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBUL49DBUL49D-
Height9.15 mm (Max)9.3 mm (Max)-
Length10.4 mm (Max)10.4 mm (Max)-
PackagingTubeTube-
Width4.6 mm (Max)4.6 mm (Max)-
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current5 A--
Pd Power Dissipation80 W80000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100050-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz0.081130 oz-
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