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| PartNumber | C2M1000170D | C2M1000170 | C2M1000170D C2M1000170 |
| Description | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | ||
| Manufacturer | Cree, Inc. | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | SiC | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1.7 kV | - | - |
| Id Continuous Drain Current | 4.9 A | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
| Vgs Gate Source Voltage | 25 V, - 10 V | - | - |
| Qg Gate Charge | 13 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Forward Transconductance Min | 0.9 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 46 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Unit Weight | 1.340411 oz | - | - |