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| PartNumber | CGH60008D-GP4 | CGH60015D | CGH60008D |
| Description | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 Watt | RF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dB | RF JFET Transistors DC-6GHz 8W GaN Gain@ 4GHz 15dB |
| Manufacturer | Cree, Inc. | Wolfspeed / Cree | Wolfspeed / Cree |
| Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN | GaN SiC | GaN SiC |
| Gain | 15 dB | 15 dB | 15 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - | - |
| Id Continuous Drain Current | 0.75 A | - | - |
| Output Power | 8 W | 15 W | 8 W |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | - | - | - |
| Pd Power Dissipation | - | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Die | - | - |
| Packaging | Waffle | Waffle | Waffle |
| Application | - | - | - |
| Configuration | Single | Single | Single |
| Height | 100 um | - | - |
| Length | 820 um | - | - |
| Operating Frequency | 4 GHz to 6 GHz | 4 GHz to 6 GHz | 4 GHz to 6 GHz |
| Operating Temperature Range | - | - | - |
| Product | GaN HEMT | - | - |
| Width | 920 um | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Gate Source Cutoff Voltage | - | - | - |
| Class | - | - | - |
| Development Kit | - | - | - |
| Fall Time | - | - | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| Product Type | RF JFET Transistors | - | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - | - |
| Rise Time | - | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | Transistors | - | - |
| Typical Turn Off Delay Time | - | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |
| Package Case | - | Bare Die | Bare Die |
| Pd Power Dissipation | - | - | - |
| Id Continuous Drain Current | - | 1.5 A | 0.75 A |
| Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
| Vgs th Gate Source Threshold Voltage | - | - 3 V | - 3 V |
| Rds On Drain Source Resistance | - | 1 Ohms | 1.6 Ohms |
| Forward Transconductance Min | - | - | - |
| Vgs Gate Source Breakdown Voltage | - | - 10 V to + 2 V | - 10 V to + 2 V |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |