CMLT3820G TR vs CMLT3904E vs CMLT3820G

 
PartNumberCMLT3820G TRCMLT3904ECMLT3820G
DescriptionBipolar Transistors - BJT Small Signal Transistor NPNBipolar Transistors - BJT NPN Complementary Enhanced
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor Corp
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563SOT-563-6-
Transistor PolarityNPNNPN-
ConfigurationSingleDual-
Collector Emitter Voltage VCEO Max60 V40 V-
Collector Base Voltage VCBO80 V60 V-
Emitter Base Voltage VEBO5 V6 V-
Collector Emitter Saturation Voltage0.28 V0.1 V-
Gain Bandwidth Product fT150 MHz300 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCMLT38CMLT39CMLT3820
DC Current Gain hFE Max200--
PackagingReelReelDigi-ReelR Alternate Packaging
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current1 A0.45 A-
Pd Power Dissipation250 mW350 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesCMLT3820G PBFREE TRCMLT3904E TR-
Unit Weight0.000106 oz0.000106 oz-
Maximum DC Collector Current-0.2 A-
Height-0.58 mm-
Length-1.6 mm-
Width-1.2 mm-
DC Collector/Base Gain hfe Min-90-
Tradename--CMLT3
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
Power Max--250mW
Transistor Type--NPN
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--200 @ 500mA, 5V
Vce Saturation Max Ib Ic--280mV @ 100mA, 1A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--150MHz
Top