CMLT3906E vs CMLT3906E T/R vs CMLT3906EG

 
PartNumberCMLT3906ECMLT3906E T/RCMLT3906EG
DescriptionBipolar Transistors - BJT PNP Complementary Enhanced
ManufacturerCentral Semiconductor-Central Semiconductor Corp
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.1 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesCMLT39-CMLT3906
Height0.58 mm--
Length1.6 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.2 mm--
BrandCentral Semiconductor--
Continuous Collector Current0.45 A--
DC Collector/Base Gain hfe Min90--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesCMLT3906E TR--
Unit Weight0.000106 oz--
Tradename--CMLT3
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
Power Max--150mW
Transistor Type--2 PNP (Dual)
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--150 @ 10mA, 1V
Vce Saturation Max Ib Ic--200mV @ 5mA, 50mA
Current Collector Cutoff Max---
Frequency Transition--300MHz
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