 | |  | |
| PartNumber | CSD17301Q5A | CSD17302Q5A | CSD17302 |
| Description | MOSFET 30V N Channel NexFET Pwr MOSFET | MOSFET 30V N Channel NexFET Power MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | TI |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VSONP-8 | VSONP-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 3 mOhms | 9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 19 nC | 5.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.2 W | 3 W | - |
| Configuration | Single | Single | Single |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | 1 mm | - |
| Length | 6 mm | 6 mm | - |
| Series | CSD17301Q5A | CSD17302Q5A | CSD17302Q5A |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Driver | - | - |
| Width | 4.9 mm | 4.9 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Fall Time | 10.5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16.2 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.003527 oz | - | - |
| Forward Transconductance Min | - | 68 S | - |
| Typical Turn Off Delay Time | - | 10.6 ns | 10.6 ns |
| Typical Turn On Delay Time | - | 5.2 ns | 5.2 ns |
| Package Case | - | - | VSON-FET-8 |
| Pd Power Dissipation | - | - | 3 W |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 16 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
| Rds On Drain Source Resistance | - | - | 9 mOhms |
| Qg Gate Charge | - | - | 5.4 nC |
| Forward Transconductance Min | - | - | 68 S |