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| PartNumber | CXT5551 TR | CXT5551 | CXT5551 (1G6) |
| Description | Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 6.0V 600mA | Bipolar Junction Transistor, NPN Type, SOT-89 | |
| Manufacturer | Central Semiconductor | CJ | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 75 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 300 mV | - | - |
| Maximum DC Collector Current | 600 mA | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | CXT5 | - | - |
| DC Current Gain hFE Max | 250 at 10 mA, 5 V | - | - |
| Packaging | Reel | - | - |
| Brand | Central Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 80 at 10 mA, 5 V | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | CXT5551 PBFREE TR | - | - |
| Unit Weight | 0.000529 oz | - | - |