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| PartNumber | CY7S1061GE30-10BVXIT | CY7S1061GE30-10BVXI | CY7S1061GE30-10BVM |
| Description | SRAM Async SRAMS | SRAM Async SRAMS | SRAM 16Mb Powersnooze 3.3V ERR pinMil temp |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | IDT (Integrated Device Technology) |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | N |
| Memory Size | 16 Mbit | 16 Mbit | 9 Mbit |
| Organization | 1 M x 16 | 1 M x 16 | 256 k x 36 |
| Access Time | 10 ns | 10 ns | 10 ns |
| Maximum Clock Frequency | - | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Packaging | Reel | Tray | Tray |
| Memory Type | Volatile | Volatile | SDR |
| Series | CY7S1061 | CY7S1061 | 70T651 |
| Type | Synchronous | Synchronous | Asynchronous |
| Brand | Cypress Semiconductor | Cypress Semiconductor | IDT |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 2000 | 480 | 6 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Interface Type | - | - | Parallel |
| Supply Voltage Max | - | - | 2.6 V |
| Supply Voltage Min | - | - | 2.4 V |
| Supply Current Max | - | - | 445 mA |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | CABGA-256 |
| Height | - | - | 1.4 mm |
| Length | - | - | 17 mm |
| Width | - | - | 17 mm |
| Part # Aliases | - | - | 70T651 IDT70T651S10BCI |