DDA124EH-7 vs DDA124EH vs DDA124EK-7

 
PartNumberDDA124EH-7DDA124EHDDA124EK-7
DescriptionBipolar Transistors - Pre-Biased 150MW 22KBipolar Transistors - Pre-Biased 300MW 22KW 22KW
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDualDual-
Transistor PolarityPNPPNP-
Typical Input Resistor22 kOhms22 kOhms-
Typical Resistor Ratio11-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6--
DC Collector/Base Gain hfe Min56--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA100 mA-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDDA124DDA124-
PackagingReelDigi-ReelR Alternate Packaging-
Height0.6 mm--
Length1.6 mm--
Width1.2 mm--
BrandDiodes Incorporated--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000106 oz0.000106 oz-
Package Case-SOT-563, SOT-666-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-563-
Power Max-150mW-
Transistor Type-2 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-22k-
Resistor Emitter Base R2 Ohms-22k-
DC Current Gain hFE Min Ic Vce-56 @ 5mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 500μA, 10mA-
Current Collector Cutoff Max---
Frequency Transition-250MHz-
DC Collector Base Gain hfe Min-56-
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