 |  |  | |
| PartNumber | DMC205010R | DMC2053UVT-13 | DMC2050USD |
| Description | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | MOSFET MOSFET BVDSS: 8V-24V | |
| Manufacturer | Panasonic | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | MOSFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-6 | TSOT-26-6 | - |
| Transistor Polarity | NPN | N-Channel, P-Channel | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 130 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Maximum Operating Temperature | + 85 C | + 150 C | - |
| Packaging | Reel | Reel | - |
| Brand | Panasonic | Diodes Incorporated | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 210 | - | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | MOSFETs | - |
| Technology | - | Si | - |
| Number of Channels | - | 2 Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 4.6 A, 3.2 A | - |
| Rds On Drain Source Resistance | - | 35 mOhms, 74 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV, 1 V | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 3.6 nC, 5.9 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Pd Power Dissipation | - | 1.1 W | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
| Fall Time | - | 3.6 ns, 18 ns | - |
| Rise Time | - | 3 ns, 7.8 ns | - |
| Typical Turn Off Delay Time | - | 12.5 ns, 31 ns | - |
| Typical Turn On Delay Time | - | 2.6 ns, 3.2 ns | - |