 |  |  | |
| PartNumber | DMN2230U-7 | DMN2215UDM-7 | DMN2215UDM |
| Description | MOSFET 600mW 20Vdss | MOSFET 650mW 20V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-26-6 | - |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 2 A | 2 A | - |
| Rds On Drain Source Resistance | 110 mOhms | 100 mOhms | - |
| Vgs Gate Source Voltage | 12 V | 4.5 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 600 mW | 650 mW | - |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1 mm | 1.1 mm | - |
| Length | 2.9 mm | 3 mm | - |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | DMN22 | DMN22 | DMN22 |
| Transistor Type | 1 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 1.3 mm | 1.6 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 3.8 ns | 8.3 ns | 3.8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.8 ns | 3.8 ns | 3.8 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19.6 ns | 19.6 ns | 19.6 ns |
| Typical Turn On Delay Time | 8 ns | 8 ns | 8 ns |
| Unit Weight | 0.000282 oz | 0.000529 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
| Package Case | - | - | SOT-23-6 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-26 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 650mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 188pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 2A |
| Rds On Max Id Vgs | - | - | 100 mOhm @ 2.5A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 650 mW |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 2 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |
| Rds On Drain Source Resistance | - | - | 165 mOhms |
| Forward Transconductance Min | - | - | 5 S |