 | |  | |
| PartNumber | DMT6002LPS-13 | DMT6004LPS-13 | DMT6004LPS |
| Description | MOSFET MOSFET BVDSS 41V-60V | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI5060-8 | PowerDI5060-8 | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.003386 oz | 0.003386 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 90 A | - |
| Rds On Drain Source Resistance | - | 2.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 96.3 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2.1 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | PowerDI | - |
| Height | - | 1 mm | - |
| Length | - | 5.8 mm | - |
| Series | - | DMT6004 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 4.9 mm | - |
| Fall Time | - | 32.9 ns | - |
| Rise Time | - | 17.7 ns | - |
| Typical Turn Off Delay Time | - | 53.5 ns | - |
| Typical Turn On Delay Time | - | 9.9 ns | - |