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| PartNumber | DSS4160FDB-7 | DSS4160DS-7 | DSS4160T |
| Description | Bipolar Transistors - BJT SS Low Sat Transistor | Bipolar Transistors - BJT NPN, NPN 60Vceo 1A 1.1W 200Hfe 150MHz | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | DIODES |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| RoHS | - | Y | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-26-6 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 60 V | - |
| Collector Base Voltage VCBO | - | 80 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Collector Emitter Saturation Voltage | - | 60 mV | - |
| Maximum DC Collector Current | - | 2 A | - |
| Gain Bandwidth Product fT | - | 220 MHz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Series | - | DSS41 | - |
| Continuous Collector Current | - | 1 A | - |
| DC Collector/Base Gain hfe Min | - | 250 at 1 mA, 5 V | - |
| Unit Weight | - | 0.000529 oz | - |