EMX51T2R vs EMX5T2R vs EMX5

 
PartNumberEMX51T2REMX5T2REMX5
DescriptionBipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6Bipolar Transistors - BJT DUAL NPN 11V 50MA
ManufacturerROHM SemiconductorROHM SemiconductorRohm Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6--
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max20 V11 V-
Collector Base Voltage VCBO20 V20 V-
Emitter Base Voltage VEBO5 V3 V-
Collector Emitter Saturation Voltage120 mV--
Maximum DC Collector Current200 mA0.05 A-
Gain Bandwidth Product fT400 MHz3.2 GHz-
DC Current Gain hFE Max56056 at 5 mA, 10 V-
PackagingReelReelDigi-ReelR Alternate Packaging
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current200 mA--
DC Collector/Base Gain hfe Min12056-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Part # AliasesEMX51EMX5-
Maximum Operating Temperature-+ 150 C-
Series-EMX5-
Height-0.5 mm-
Length-1.6 mm-
Width-1.2 mm-
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--EMT6
Power Max--150mW
Transistor Type--2 NPN (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--120 @ 1mA, 6V
Vce Saturation Max Ib Ic--300mV @ 5mA, 50mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--350MHz
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