F3L25R12W1T4B27BOMA1 vs F3L25R07W2E3-B11 vs F3L25R12W1T4-B21

 
PartNumberF3L25R12W1T4B27BOMA1F3L25R07W2E3-B11F3L25R12W1T4-B21
DescriptionIGBT Modules LOW POWER EASY
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
TechnologySi--
ProductIGBT Silicon Modules--
Configuration3-Phase--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.85 V--
Continuous Collector Current at 25 C25 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation215 W--
Package / CaseEasyPack1B--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity24--
SubcategoryIGBTs--
TradenameEasyPACK--
Part # AliasesF3L25R12W1T4_B27 SP001056108--
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