FCMT125N65S3 vs FCMT16N60N vs FCMT16N60N-ES

 
PartNumberFCMT125N65S3FCMT16N60NFCMT16N60N-ES
DescriptionMOSFET SF3 650V 125MOHM MO SFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
Mounting StyleSMD/SMT--
Package / CasePQFN-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance125 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge49 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation181 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Forward Transconductance Min16 S--
Fall Time5.8 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time22 ns--
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