FDB060AN08A0 vs FDB060AN08A0-CT vs FDB060AN08A0-NL

 
PartNumberFDB060AN08A0FDB060AN08A0-CTFDB060AN08A0-NL
DescriptionMOSFET Discrete Auto N-Ch PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation255 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFDB060AN08A0--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time38 ns--
Product TypeMOSFET--
Rise Time79 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time19 ns--
Part # AliasesFDB060AN08A0_NL--
Unit Weight0.046296 oz--
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