FDD6760A vs FDD6776A vs FDD6770A

 
PartNumberFDD6760AFDD6776AFDD6770A
DescriptionMOSFET 25V 50A N-Channel PowerTrenchMOSFET 25V 30A N-Channel PowerTrenchMOSFET N-CH 25V 24A DPAK
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current27 A17.7 A-
Rds On Drain Source Resistance3.2 mOhms7.5 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation3.7 W3.7 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenamePowerTrench--
PackagingReelReelReel
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFDD6760A--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time6 ns3 ns5 ns
Product TypeMOSFETMOSFET-
Rise Time9 ns5 ns7 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns18 ns24 ns
Typical Turn On Delay Time10 ns8 ns9 ns
Unit Weight0.009184 oz0.000557 oz0.009184 oz
Package Case--TO-252-3
Pd Power Dissipation--3.7 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--27 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--4 mOhms
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