FDMD82100L vs FDMD82100 vs FDMD8203

 
PartNumberFDMD82100LFDMD82100FDMD8203
DescriptionMOSFET FET 100V 19.5 MOHM PQFNMOSFET PT5 100/20V Dual Nch Power Trench MOSFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-12PQFN-12-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current24 A7 A-
Rds On Drain Source Resistance36 mOhms35 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation38 W1 W, 2.1 W-
ConfigurationDualDual-
TradenamePowerTrench Power ClipPowerTrench Power Clip-
PackagingReelReel-
Height0.8 mm0.8 mm-
Length5 mm5 mm-
SeriesFDMD82100LFDMD82100-
Transistor Type2 N-Channel2 N-Channel-
Width3.3 mm3.3 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min29 S18 S-
Fall Time2.9 ns3.3 ns-
Product TypeMOSFETMOSFET-
Rise Time2.8 ns3.2 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns15 ns-
Typical Turn On Delay Time7.9 ns9.4 ns-
Unit Weight0.002904 oz0.002904 oz-
Top