FDP12N50 vs FDP12N50,FDP12N50NZ vs FDP12N50F

 
PartNumberFDP12N50FDP12N50,FDP12N50NZFDP12N50F
DescriptionMOSFET 500V N-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current6.9 A--
Rds On Drain Source Resistance550 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation165 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameUniFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFDP12N50--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min11.5 S--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.063493 oz--
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