FDWS9509L-F085 vs FDWS9510L-F085 vs FDWS9508L-F085

 
PartNumberFDWS9509L-F085FDWS9510L-F085FDWS9508L-F085
DescriptionMOSFET PMOS PWR56 40V 8 MOHMMOSFET PT8P 40V LL PQFN56MOSFET PMOS PWR56 40V 4.9 MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDFN-8DFN-8DFN-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current65 A50 A80 A
Rds On Drain Source Resistance8 mOhms13.5 mOhms4.9 mOhms
Vgs th Gate Source Threshold Voltage1 V3 V1 V
Vgs Gate Source Voltage16 V16 V16 V
Qg Gate Charge48 nC37 nC82 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation107 W75 W214 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
Transistor Type1 P-Channel Power Trench MOSFET-1 P-Channel Power Trench MOSFET
BrandON SemiconductorON SemiconductorON Semiconductor
Fall Time71 ns37 ns114 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns4 ns5 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time198 ns110 ns389 ns
Typical Turn On Delay Time10 ns10 ns10 ns
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