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| PartNumber | FF225R12ME4 | FF225R12ME4_B11 | FF225R12ME4 , 1N5366B |
| Description | IGBT Modules IGBT 1200V 225A | IGBT Modules IGBT Module 225A 1200V | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 2.15 V | 1.85 V | - |
| Continuous Collector Current at 25 C | 225 A | 225 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 1050 W | 1.05 kW | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Press Fit | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 6 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF225R12ME4BOSA1 SP000405064 | FF225R12ME4B11BPSA1 SP000691802 | - |
| Configuration | - | Dual | - |
| Package / Case | - | 152 mm x 62.5 mm x 20.5 mm | - |