FF400R12KE3 vs FF400R12KE3 FF300R12KE3 vs FF400R12KE3 ENG

 
PartNumberFF400R12KE3FF400R12KE3 FF300R12KE3FF400R12KE3 ENG
DescriptionIGBT Modules 1200V 400A DUAL HALF BRIDGE
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C580 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2 kW--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.9 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF400R12KE3HOSA1 SP000100781--
Unit Weight12 oz--
Top