 | | | |
| PartNumber | FF800R12KE3 | FF800R12KF4 | FF800R12KE3NOSA1 |
| Description | IGBT Modules 1200V 800A DUAL | IGBT Modules 1200V 800A DUAL | IGBT MODULE VCES 1200V 800A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | N | N | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.7 V | 2.7 V | - |
| Continuous Collector Current at 25 C | 1200 A | 800 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 3.9 kW | 5 kW | - |
| Package / Case | IHM130 | IHM | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Packaging | Tray | - | - |
| Height | 38 mm | 38 mm | - |
| Length | 140 mm | 140 mm | - |
| Width | 130 mm | 130 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | SMD/SMT | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 2 | 2 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF800R12KE3NOSA1 SP000100571 | - | - |
| Technology | - | Si | - |