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| PartNumber | FGH40N65UFDTU | FGH40N65UFDTU-F085 | FGH40N65UFD |
| Description | IGBT Transistors N-ch / 40A 650V | IGBT Transistors N-ch / 40A 650V IGBT | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247AB-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | FGH40N65UFD | FGH40N65UF_F085 | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 80 A | 40 A | - |
| Height | 20.6 mm | - | - |
| Length | 15.6 mm | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | - |
| Collector Emitter Saturation Voltage | - | 1.8 V | - |
| Continuous Collector Current at 25 C | - | 80 A | - |
| Pd Power Dissipation | - | 290 W | - |
| Qualification | - | AEC-Q101 | - |
| Gate Emitter Leakage Current | - | +/- 400 nA | - |
| Part # Aliases | - | FGH40N65UFDTU_F085 | - |