FQA6N90 vs FQA6N90C vs FQA6N90C,6N90C,FQA6N90,

 
PartNumberFQA6N90FQA6N90CFQA6N90C,6N90C,FQA6N90,
DescriptionMOSFET 900V N-Channel QFET- Bulk (Alt: FQA6N90C)
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current3.87 A--
Rds On Drain Source Resistance1.93 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation198 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.5 S--
Fall Time55 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.000198 oz--
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