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| PartNumber | FQP6N80C | FQP6N80 | FQP6N80,FQP6N80C |
| Description | MOSFET 800V N-Ch Q-FET advance C-Series | MOSFET 800V N-Channel QFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 5.5 A | 5.8 A | - |
| Rds On Drain Source Resistance | 2.5 Ohms | 1.95 Ohms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 158 W | 158 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | QFET | - | - |
| Packaging | Tube | Tube | - |
| Height | 16.3 mm | 16.3 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | FQP6N80C | FQP6N80 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 4.7 mm | 4.7 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 5.4 S | 5.9 S | - |
| Fall Time | 44 ns | 45 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 65 ns | 70 ns | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 47 ns | 65 ns | - |
| Typical Turn On Delay Time | 26 ns | 30 ns | - |
| Part # Aliases | FQP6N80C_NL | - | - |
| Unit Weight | 0.063493 oz | 0.063493 oz | - |