FQPF19N20C vs FQPF19N20 vs FQPF19N20C,FQPF19N20

 
PartNumberFQPF19N20CFQPF19N20FQPF19N20C,FQPF19N20
DescriptionMOSFET 200V N-Channel Advance Q-FETMOSFET 200V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current19 A11.8 A-
Rds On Drain Source Resistance170 mOhms150 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation43 W50 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFETQFET-
PackagingTubeTube-
Height16.07 mm16.07 mm-
Length10.36 mm10.36 mm-
SeriesFQPF19N20CFQPF19N20-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.9 mm4.9 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min10.8 S8.7 S-
Fall Time115 ns80 ns-
Product TypeMOSFETMOSFET-
Rise Time150 ns190 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time135 ns55 ns-
Typical Turn On Delay Time15 ns20 ns-
Part # AliasesFQPF19N20C_NLFQPF19N20_NL-
Unit Weight0.080072 oz0.080072 oz-
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