FQPF3N80C vs FQPF3N80 vs FQPF3N80C,3N80C

 
PartNumberFQPF3N80CFQPF3N80FQPF3N80C,3N80C
DescriptionMOSFET 800V N-Ch Q-FET advance C-SeriesMOSFET 800V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current3 A1.8 A-
Rds On Drain Source Resistance4.8 Ohms5 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation39 W39 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height16.07 mm16.3 mm-
Length10.36 mm10.67 mm-
SeriesFQPF3N80C--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.9 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min3 S2.3 S-
Fall Time32 ns30 ns-
Product TypeMOSFETMOSFET-
Rise Time43.5 ns40 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22.5 ns30 ns-
Typical Turn On Delay Time15 ns15 ns-
Part # AliasesFQPF3N80C_NLFQPF3N80_NL-
Unit Weight0.080072 oz0.090478 oz-
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