 |  | | |
| PartNumber | FZ800R12KS4_B2 | FZ800R12KS4 | FZ800R12KS4-S2 |
| Description | IGBT Modules N-CH 1.2KV 1.2KA | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 3.7 V | - | - |
| Continuous Collector Current at 25 C | 1200 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 7.6 kW | - | - |
| Package / Case | IHM130 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 38 mm | - | - |
| Length | 140 mm | - | - |
| Width | 130 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 2 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FZ800R12KS4B2NOSA1 SP000100554 | - | - |