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| PartNumber | GTVA261701FA-V1-R2 | GTVA261701FA-V1-R0 | GTVA261701FA |
| Description | RF JFET Transistors RF LDMOS FET | RF JFET Transistors RF LDMOS FET | |
| Manufacturer | Cree, Inc. | Cree, Inc. | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN SiC | GaN SiC | - |
| Gain | 17 dB | 17 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 7.5 A | 7.5 A | - |
| Output Power | 170 W | 170 W | - |
| Maximum Operating Temperature | + 225 C | + 225 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | H-37265J-2 | H-37265J-2 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Operating Frequency | 2620 MHz to 2690 MHz | 2620 MHz to 2690 MHz | - |
| Brand | Wolfspeed / Cree | Wolfspeed / Cree | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 250 | 50 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 3.8 V | - 3.8 V | - |