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| PartNumber | HN1C03FU-A(TE85L,F | HN1C03FU-A(TE85LFCT-ND | HN1C03FU-A(TE85LFDKR-ND |
| Description | Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SMT-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 20 V | - | - |
| Collector Emitter Saturation Voltage | 0.042 V | - | - |
| Maximum DC Collector Current | 300 mA | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 1200 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 300 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |