 | |  | |
| PartNumber | IAUC100N10S5N040ATMA1 | IAUC100N10S5L040ATMA1 | IAUC100N10S5L040 |
| Description | MOSFET | MOSFET | N-Ch OptiMOS-5 100V PG-TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 5.6 mOhms | 4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 78 nC | 78 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 167 W | 167 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 14 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 3 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | 30 ns | - |
| Typical Turn On Delay Time | 10 ns | 6 ns | - |
| Part # Aliases | IAUC100N10S5N040 | IAUC100N10S5L040 | - |