 | | | |
| PartNumber | IDW20G65C5,D2065C5 | IDW20G65C5B | IDW20G65C5 |
| Description | Schottky Diodes & Rectifiers SIC DIODES | ||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Diodes, Rectifiers - Single |
| Series | - | - | thinQ! |
| Product | - | - | Schottky Silicon Carbide Diodes |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IDW20G65C5FKSA1 IDW20G65C5XK SP000937050 |
| Unit Weight | - | - | 1.340411 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-247-3 |
| Technology | - | - | SiC |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | PG-TO247-3 |
| Configuration | - | - | Single |
| Speed | - | - | No Recovery Time > 500mA (Io) |
| Diode Type | - | - | Silicon Carbide Schottky |
| Current Reverse Leakage Vr | - | - | 700μA @ 650V |
| Voltage Forward Vf Max If | - | - | 1.7V @ 20A |
| Voltage DC Reverse Vr Max | - | - | 650V |
| Current Average Rectified Io | - | - | 20A (DC) |
| Reverse Recovery Time trr | - | - | 0ns |
| Capacitance Vr F | - | - | 590pF @ 1V, 1MHz |
| Operating Temperature Junction | - | - | -55°C ~ 175°C |
| Pd Power Dissipation | - | - | 112 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vf Forward Voltage | - | - | 1.5 V |
| Vr Reverse Voltage | - | - | 650 V |
| Ir Reverse Current | - | - | 210 uA |
| If Forward Current | - | - | 20 A |
| Vrrm Repetitive Reverse Voltage | - | - | 650 V |
| Ifsm Forward Surge Current | - | - | 103 A |
| trr Reverse Recovery time | - | - | - |