IHW25N120R2 vs IHW25N120R2 H25R1202 vs IHW25N120R2,H25N1202,

 
PartNumberIHW25N120R2IHW25N120R2 H25R1202IHW25N120R2,H25N1202,
DescriptionIGBT Transistors REVERSE CONDUCT IGBT 1200V 25A
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C50 A--
Pd Power Dissipation365 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Series600V TRENCHSTOP--
PackagingTube--
Height20.95 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIHW25N120R2FKSA1 IHW25N12R2XK SP000212016--
Unit Weight1.340411 oz--
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