IPB019N08N3 G vs IPB019N08N vs IPB019N08N3

 
PartNumberIPB019N08N3 GIPB019N08NIPB019N08N3
DescriptionMOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance1.6 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge206 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle Quint Source-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min103 S--
Fall Time33 ns33 ns-
Product TypeMOSFET--
Rise Time73 ns73 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time86 ns86 ns-
Typical Turn On Delay Time28 ns28 ns-
Part # AliasesIPB019N08N3GATMA1 IPB19N8N3GXT SP000444110--
Unit Weight0.056438 oz0.056438 oz-
Part Aliases-IPB019N08N3GATMA1 IPB019N08N3GXT SP000444110-
Package Case-TO-263-7-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-180 A-
Vds Drain Source Breakdown Voltage-80 V-
Rds On Drain Source Resistance-1.9 mOhms-
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