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| PartNumber | IPB060N15N5ATMA1 | IPB0630-4R7M | IPB065N03L G |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 136 A | - | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 68 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 53 S | - | - |
| Fall Time | 4.1 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.3 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22.2 ns | - | - |
| Typical Turn On Delay Time | 14.9 ns | - | - |
| Part # Aliases | IPB060N15N5 SP001607814 | - | - |
| Unit Weight | 0.051500 oz | - | - |