IPB100N06S205ATMA4 vs IPB100N06S205ATMA1 vs IPB100N06S2-05

 
PartNumberIPB100N06S205ATMA4IPB100N06S205ATMA1IPB100N06S2-05
DescriptionMOSFET N-CHANNEL_55/60VMOSFET N-CHANNEL_55/60VRF Bipolar Transistors MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
PackagingReelReelReel
Height4.4 mm4.4 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPB100N06S2-05 SP001067896IPB100N06S2-05 IPB100N06S205XT SP000218874-
Unit Weight0.139332 oz-0.139332 oz
Series--OptiMOS
Part Aliases--IPB100N06S205ATMA1 IPB100N06S205ATMA4 SP001067896
Tradename--OptiMOS
Package Case--TO-252-3
Pd Power Dissipation--300 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--30 ns
Rise Time--31 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--100 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--4.7 mOhms
Typical Turn Off Delay Time--59 ns
Typical Turn On Delay Time--21 ns
Channel Mode--Enhancement
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