IPB100N10S3-05 vs IPB100N10S305ATMA1 vs IPB100N10S3-05(1)

 
PartNumberIPB100N10S3-05IPB100N10S305ATMA1IPB100N10S3-05(1)
DescriptionMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-TMOSFET N-CHANNEL_100+
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4.8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-T--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time20 ns--
Product TypeMOSFETMOSFET-
Rise Time17 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time34 ns--
Part # AliasesIPB100N10S305ATMA1 IPB1N1S35XT SP000261243IPB100N10S3-05 IPB1N1S35XT SP000261243-
Unit Weight0.139332 oz0.139332 oz-
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