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| PartNumber | IPB180N06S4-H1 | IPB180N06S4-H1(4N06H1) | IPB180N06S4-HI |
| Description | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2 | ||
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | OptiMOS-T2 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | IPB180N06S4H1ATMA1 IPB180N06S4H1ATMA2 IPB180N06S4H1XT SP001028786 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | OptiMOS | - | - |
| Package Case | TO-263-7 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Rds On Drain Source Resistance | 1.7 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Channel Mode | Enhancement | - | - |