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| PartNumber | IPB70N03S | IPB70N04S307ATMA1 | IPB70N04S3-07 |
| Description | MOSFET N-CHANNEL_30/40V | IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS-T |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB70N04S307ATMA1 IPB70N04S307XT SP000279556 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 79 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 8 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 6.2 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 17 ns |
| Typical Turn On Delay Time | - | - | 13 ns |
| Channel Mode | - | - | Enhancement |