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IPB70N04S4-06 vs IPB70N04S307ATMA1 vs IPB70N04S3-07

 
PartNumberIPB70N04S4-06IPB70N04S307ATMA1IPB70N04S3-07
DescriptionMOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2MOSFET N-CHANNEL_30/40VIGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance5.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation58 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
TradenameOptiMOS-OptiMOS
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
SeriesOptiMOS-T2-OptiMOS-T
Transistor Type1 N-Channel-1 N-Channel
Width9.25 mm--
BrandInfineon Technologies--
Fall Time9 ns-7 ns
Product TypeMOSFET--
Rise Time10 ns-8 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time7 ns-17 ns
Typical Turn On Delay Time8 ns-13 ns
Part # AliasesIPB70N04S406ATMA1 IPB7N4S46XT SP000711476--
Unit Weight0.139332 oz-0.139332 oz
Part Aliases--IPB70N04S307ATMA1 IPB70N04S307XT SP000279556
Package Case--TO-252-3
Pd Power Dissipation--79 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--40 V
Rds On Drain Source Resistance--6.2 mOhms
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