 | |  | |
| PartNumber | IPB80N04S3-04 | IPB80N04S3-03 | IPB80N04S3 |
| Description | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 3.9 mOhms | 3.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 136 W | 188 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-T | OptiMOS-T | OptiMOS-T |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 10 ns | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 17 ns | 17 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 39 ns | 39 ns |
| Typical Turn On Delay Time | 20 ns | 25 ns | 25 ns |
| Part # Aliases | IPB80N04S304ATMA1 IPB8N4S34XT SP000261217 | IPB80N04S303ATMA1 IPB8N4S33XT SP000260848 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Part Aliases | - | - | IPB80N04S303ATMA1 IPB80N04S303XT SP000260848 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 188 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 3.5 mOhms |