IPB80P03P4-05 vs IPB80P03P405ATMA1 vs IPB80P03P4-07

 
PartNumberIPB80P03P4-05IPB80P03P405ATMA1IPB80P03P4-07
DescriptionMOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2MOSFET P-CH 30V 80A TO263-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.7 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation137 W--
ConfigurationSingle--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS-P2--
Transistor Type1 P-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time35 ns--
Part # AliasesIPB80P03P405ATMA1 IPB8P3P45XT SP000396282--
Unit Weight0.139332 oz--
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