IPD100N04S4-02 vs IPD100N04S402ATMA1 vs IPD100N04S4

 
PartNumberIPD100N04S4-02IPD100N04S402ATMA1IPD100N04S4
DescriptionMOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2MOSFET N-CH 40V 100A TO252-3-313
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.7 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge91 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS-T2--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time23 ns--
Part # AliasesIPD100N04S402ATMA1 IPD1N4S42XT SP000646184--
Unit Weight0.139332 oz--
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