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| PartNumber | IPD35N10S3L-26 | IPD35N10S3L26ATMA1 | IPD35N10S3L-26 3N10L26 |
| Description | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 35 A | 35 A | - |
| Rds On Drain Source Resistance | 24 mOhms | 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 30 nC | 39 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 71 W | 71 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS-T | XPD35N10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4 ns | 4 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | 18 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Part # Aliases | IPD35N10S3L26ATMA1 IPD35N1S3L26XT SP000386184 | IPD35N10S3L-26 IPD35N1S3L26XT SP000386184 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |