 | |  | |
| PartNumber | IPD50N06S2L13ATMA2 | IPD50N06S2L13ATMA1 | IPD50N06S2L13 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD50N06S2L-13 SP001063626 | IPD50N06S2L-13 IPD50N06S2L13XT SP000252172 | - |
| Unit Weight | 0.139332 oz | 0.011993 oz | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 10.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 69 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 136 W | - |
| Channel Mode | - | Enhancement | - |
| Series | - | XPD50N06 | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 29 ns | - |
| Typical Turn Off Delay Time | - | 43 ns | - |
| Typical Turn On Delay Time | - | 9 ns | - |
| Part Aliases | - | - | IPD50N06S2L-13 SP001063626 |
| Package Case | - | - | TO-252-3 |