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| PartNumber | IPD60R280CFD7ATMA1 | IPD60R210CFD7ATMA1 | IPD60R280P7ATMA1 |
| Description | MOSFET LOW POWER_NEW | MOSFET LOW POWER_NEW | MOSFET LOW POWER_NEW |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 9 A | 12 A | 12 A |
| Rds On Drain Source Resistance | 237 mOhms | 210 mOhms | 214 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 18 nC | 23 nC | 18 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 51 W | 64 W | 53 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Series | CoolMOS CFD7 | - | CoolMOS P7 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 ns | 75 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | 16.5 ns | 9 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 53 ns | 54 ns | 60 ns |
| Typical Turn On Delay Time | 17 ns | 22 ns | 17 ns |
| Part # Aliases | IPD60R280CFD7 SP001634124 | IPD60R210CFD7 SP001715662 | IPD60R280P7 SP001658316 |
| Unit Weight | - | - | 0.011993 oz |