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| PartNumber | IPG20N04S4L-11A | IPG20N04S4L-11 | IPG20N04S4L11ATMA1 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 10.1 mOhms | 11.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 26 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 41 W | 41 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Series | OptiMOS-T2 | OptiMOS-T2 | Automotive, AEC-Q101, OptiMOS |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2 ns | - | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Part # Aliases | IPG20N04S4L11AATMA1 SP001023836 | IPG20N04S4L11ATMA1 IPG2N4S4L11XT SP000705564 | - |
| Height | - | 1.27 mm | - |
| Length | - | 5.9 mm | - |
| Width | - | 5.15 mm | - |
| Package Case | - | - | 8-PowerVDFN |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TDSON-8-4 (5.15x6.15) |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 41W |
| Drain to Source Voltage Vdss | - | - | 40V |
| Input Capacitance Ciss Vds | - | - | 1990pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 20A |
| Rds On Max Id Vgs | - | - | 11.6 mOhm @ 17A, 10V |
| Vgs th Max Id | - | - | 2.2V @ 15μA |
| Gate Charge Qg Vgs | - | - | 26nC @ 10V |