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| PartNumber | IPL65R190E6AUMA1 | IPL65R190E6 | IPL65R195C7 |
| Description | MOSFET N-Ch 650V 20.2A VSON-4 | Infineon HIGH POWER_LEGACY | MOSFET HIGH POWER BEST IN CLASS |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSON-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 20.2 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 73 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 151 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 8 mm | - | - |
| Series | CoolMOS E6 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 8 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 112 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | IPL65R190E6AUMA1 SP001074938 | - | - |